Description
- N-Channel Power MOSFET
- Continuous Drain Current (ID) is 110A when VGS is 10V
- Minimum Gate threshold voltage 2V
- Drain to Source Breakdown Voltage: 55V
- Low On-Resistance of 8.0mΩ
- Gate-Source Voltage is (VGS) is ±20V
- Rise time is 101ns
- It is commonly used with Power Switching circuits
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